LE28C1001M Datasheet - Sanyo Semicon Device

LE28C1001M - 1MEG (131072 words x 8 bits) Flash Memory

LE28C1001M Features

* Highly reliable 2-layer polysilicon CMOS flash EEPROM process

* Read and write operations using a 5 V single-voltage power supply

* Fast access time: 90, 120, and 150 ns

* Low power dissipation

* Operating current (read): 30 mA (maximum)

* Standby cu

Datasheet Details

LE28C1001M

Sanyo Semicon Device

281.06 KB

1meg (131072 words x 8 bits) flash memory.

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