1N50 Datasheet | Specifications & PDF Download

500V N-Channel MOSFETs PDD01N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Pow

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DTN11N50SJ/DTP11N50SJ/DTP11N50FSJ www.din-tek.jp N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) m

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SPB21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features • 11A, 500V, RDS(on) = 0.55Ω @VGS

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NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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www.DataSheet4U.com PD- 91809B SMPS MOSFET IRFB11N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Powe

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Preliminary datasheet 500V N-Channel MOSFETs PDL01N50 General Description These N-Channel enhancement mode power field effect transistors are plana

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50

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MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDG

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DataSheet.in NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested The

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HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 500 V

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo

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DTN11N50SJ/DTP11N50SJ/DTP11N50FSJ www.din-tek.jp N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) m

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www.DataSheet4U.com PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power

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Philips Semiconductors Objective Specification PowerMOS transistor PHP1N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power tran

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