1N6263 Datasheet | Specifications & PDF Download

MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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® 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switch

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BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by

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1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: ․ Low Forward Voltage Drop ․ Guard Ring Construction for Transient Protection ․ Fast Switching

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1N5711 and 1N6263 Schottky Diodes DO-204AH (DO-35 Glass) Features • For general purpose applications • Metal-on-silicon Schottky barrier device whic

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Features ‹ For general purpose applications ‹ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward

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1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected

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Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltag

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SMD Type SMALL SIGNAL DIODES 1N6263W Diodes +0.10.55 -0.1 +0.11.6 -0.1 Features Low Forward Voltage Drop Guard Ring Constuction for Transient Prot

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1N6263W Surface Mount Schottky Barrier Diode Features Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time

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1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN

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R SEMICONDUCTOR FEATURES For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard

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VISHAY Schottky Diodes 1N5711 / 1N6263 Vishay Semiconductors Features • For general purpose applications • Metal-on-silicon Schottky barrier device

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SD101A (1N6263) SD101C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD101 Series is a metal on silicon Schottky barrier dev

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CENPAK ELECTRONICS Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard

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FEAT URES 1N5711 THUR 1N6263 SMALL SIGNAL SCHOTTKY DIODES DO-35 MECH AN ICAL DAT A Case: Polarity: Weight: ABSOLUT E RAT IN GS(LIMI T IN G VALU ES)

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RoHS 1N6263W DFeatures · Low Forward Voltage Drop T· Guard Ring Construction for Transient Protection .,L· Fast Switching Time · Low Reverse Capacita

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1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (hi

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1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Forward Voltage Drop  Guard Ring Construction for Transient Protection  Fast Switching

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1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time

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