1N70 Datasheet | Specifications & PDF Download

Aug 2007 PFU1N70 / PFD1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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Nov 2008 PFM1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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LSD11N70 LonFET Lonten N-channel 700V, 11A, 0.37Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction

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Aug 2007 PFU1N70 / PFD1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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Green SDU/D01N70 Product Sa mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VD

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UNISONIC TECHNOLOGIES CO., LTD 1N70 1.2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have bett

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MSF11N70 N-Channel 700V MOSFET Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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ICE11N70 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching

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1N5283-1N5314, 1N7048-1N7055 High-reliability discrete products and engineering services since 1977 CURRENT REGULATOR DIODES FEATURES  Available a

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DTN11N70SJ/DTP11N70SJ/DTP11N70FSJ www.din-tek.jp N-Channel 700V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at

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GPT11N70 / GPT11N70D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.

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HFD1N70 / HFU1N70 Dec 2008 HFD1N70 / HFU1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A FEATURES  Originative New Design

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SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES PD-97558A 15JGQ100 JANS1N7043CAT1 JANTX1N7043CAT1 JANTXV1N7043CAT1 35Amp, 100V Ref: MIL-PRF-19500/730 Maj

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AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced hi

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LSD11N70-VB LSD11N70-VB Datasheet www.VBsemi.com N-Channel 700V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2

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1N5283-1 thru 1N5314-1 & 1N7048-1 thru 1N7055-1 0.5 W Current Regulators Features  High Source Impedance  Internal Metallurgical Bond  Double Plug

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1N5283-1N5314, 1N7048-1N7055 High-reliability discrete products and engineering services since 1977 CURRENT REGULATOR DIODES FEATURES  Available a

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GC11N70F N-Channel Enhancement Mode Power MOSFET Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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