MCC Features • • • • • .
Pan Jit International
RB521S30FN2 - SURFACE MOUNT SCHOTTKY DIODES
RB521S30FN2 SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 30 Volt CURRENT 200 mA FEATURES • Extremely Hish Switching Speed • Surface mount package ideally.
Harris
RF1S30N06LE - N-Channel Enhancement-Mode Power MOSFETs
RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power .
Harris
RF1S30N06LESM - N-Channel Enhancement-Mode Power MOSFETs
RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power .
ON Semiconductor
RB521S30T1G - Schottky Barrier Diode
RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, cir.
Toshiba Semiconductor
DSF01S30SC - Silicon Epitaxial Schottky Barrier Type Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.1 9±0.02 Abusolute Maximu.
Toshiba
DSR01S30SL - Schottky Barrier Diode
Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR.
Token
BP33R881S30A - Dielectric Filters
Product Introduction Token Offers Dielectric RF Filters for Telecoms. Features : Suitable for surface mount and reflow soldering. Excellent mech.
Token
BP64R881S30A - Dielectric Filters
Product Introduction Token Offers Dielectric RF Filters for Telecoms. Features : Suitable for surface mount and reflow soldering. Excellent mech.
Yangzhou Yangjie
1S30 - Schottky Barrier Rectifier
1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr.
EIC
1S30 - SCHOTTKY BARRIER RECTIFIER DIODES
Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :.
KD
1S30 - SCHOTTKY BARRIER RECTIFIER
1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under.
Eris
1S30 - Schottky Barrier Rectifiers
1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i.
Intersil Corporation
RF1S30P06 - 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET.
Altera
EP1S30 - (EP1S10 - EP1S80) Stratix Device
Section I. Stratix Device Family Data Sheet This section provides designers with the data sheet specifications for Stratix devices. They contain feat.
Intersil
F1S30P05SM - RF1S30P05SM
RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET.
Toshiba Semiconductor
DSR01S30SC - Silicon Epitaxial Schottky Barrier Type Diode
DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximu.
VBsemi
F1S30P05 - P-Channel MOSFET
F1S30P05-VB F1S30P05-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.019 at VGS = - 10 V 0.025 at VGS = - .
Micro Commercial Components
1S30 - 1.0 Amp Schottky Barrier Rectifier
MCC Features • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1S20 THRU .
Formosa MS
1S30 - 1.0 AMP SCHOTTKY BARRIER RECTIFIERS
1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward voltage drop * High current capabi.
Rectron Semiconductor
1S30 - SCHOTTKY BARRIER RECTIFIER
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * .
