1S30 Datasheet | Specifications & PDF Download

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured

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W561XXX Data Sheet 4-TRACK PCM-MELODY WITH VOICE SYNTHESIZER (BandDirectorTM Series) Table of Contents1. 2. 3. 4. 5. GENERAL DESCRIPTION

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ST1S30 3 A, 1.5 MHz PWM step-down switching regulator with synchronous rectification Datasheet - production data DFN8 (4 x 4 mm) Features • 1.5 MHz

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RB521S30 Schottky Barrier Diode, 30 V These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and volta

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F1S30P05-VB F1S30P05-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.019 at VGS = - 10 V 0.025 at VGS = -

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GP1S30 GP1S30 s Features 1. Compact package 2. PWB mouning type 3. Double-phase phototransistor output type for detecting of rotation direction and c

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RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, cir

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Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES M1A FEATURES :

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Ch

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DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximu

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # 1S20 THRU

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES *

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1S20 THRU 1S200  RoHS COMPLIANT   Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward voltage drop * High current capabi

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RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, cir

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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