1S30 Datasheet | Specifications & PDF Download

RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, cir

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Under

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1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions i

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1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward voltage drop * High current capabi

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PQ1S30 series Low Power-Loss Voltage Regulator Low Output Current, Compact Surface Mount Type Low Power-Loss Voltage Regulators s General Description

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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RB521S30FN2 SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 30 Volt CURRENT 200 mA FEATURES • Extremely Hish Switching Speed • Surface mount package ideally

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RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Ch

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RB521S30 RB521S30 Schottky Barrier Diodes Features z Small surface mounting type z Low reverse current and low forward voltage z High reliability

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UNISONIC TECHNOLOGIES CO., LTD RB521S30 SCHOTTKY BARRIER DIODES FEATURES * Miniature surface mounting type * Low forward voltage drop (VF=0.40V Typ. a

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DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximu

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RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, cir

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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RB521S30 — Schottky Barrier Diodes September 2009 RB521S30 Schottky Barrier Diodes Features • Low Forward Voltage Drop • Flat Lead, Surface Mount

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES *

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1S20 THRU 1S200  RoHS COMPLIANT   Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extr

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RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage cl

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RB521S30 200 mA low VF MEGA Schottky barrier rectifier Rev. 01 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description Plana

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