| No |
Part Number |
Description |
Manufacture |
PDF |
| 95 |
1SV100 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
Toshiba Semiconductor
|
|
| 94 |
1SV101 |
VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS)
|
Toshiba Semiconductor
|
|
| 93 |
1SV102 |
VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS)
|
Toshiba Semiconductor
|
|
| 92 |
1SV103 |
Variable Capacitance Diode/ FM Radio Band Tuning Applications
|
Toshiba Semiconductor
|
|
| 91 |
1SV121 |
Silicon Epitaxial Planar PIN Diode
ADE-208-399(Z)
1SV121 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Rev. 0 Oct. 1995 Features
Outline
• Low capacitance.(C=0.7pF max) • Small glass packag |
Hitachi Semiconductor
|
|
| 90 |
1SV123 |
VARIABLE CAPACITANCE DIODE
|
Toshiba Semiconductor
|
|
| 89 |
1SV128 |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
Toshiba Semiconductor
|
|
| 88 |
1SV147 |
BARIABLE CAPACITANCE DIODE (FM RADIO BAND TUNING APPLICATIONS)
|
Toshiba Semiconductor
|
|
| 87 |
1SV149 |
BARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS)
|
Toshiba Semiconductor
|
|
| 86 |
1SV153 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
Toshiba Semiconductor
|
|
| 85 |
1SV160 |
VARIABLE CAPACITANCE DIODE (AFC APLICATION FOR FM RECEIVER)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV160
AFC Application for FM Receiver
· Small package. · Low series resistance: rs = 0.7 Ω (typ.)
Maximum Ratings (Ta = 25°C)
|
Toshiba Semiconductor
|
|
| 84 |
1SV161 |
Silicon Epitaxial Planar Type Variable Capacitance Diode
|
Toshiba Semiconductor
|
|
