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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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W634GU6NB 32M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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www.DataSheet.co.kr W9825G6JH 4 M  4 BANKS  16 BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie™ 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description The 8Gb (TwinDie™) 1.35V DD

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SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks 128Mb: x4, x8, x16 SDRAM Features

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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W9816G6CH 512K × 2 BANKS × 16 BITS SDRAM Table of Content- 1. GENERAL DESCRIPTION

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W972GG6KB 16M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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www.DataSheet.co.kr W9725G8JB 8M  4 BANKS  8 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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www.DataSheet.co.kr W972GG6JB 16M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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W9825G6KH 4 M  4 BANKS  16 BITS SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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www.DataSheet.co.kr W9425G6JH 4 M × 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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www.DataSheet.co.kr W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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www.DataSheet.co.kr W9864G2IH 512K × 4 BANKS × 32BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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W9712G6KB 2M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key

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W971GG6SB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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