2.0P Datasheet | Specifications & PDF Download

TNY274-280 TinySwitch-III Family Energy-Efficient, Off-Line Switcher with Enhanced Flexibility and Extended Power Range Product Highlights Lowest Sys

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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LM32010P Features n n 12 cm [4.7 ] QVGA format Black & white display n n Medium Size Graphic Type LCD Module High brightness (80 cd/m2) Mechanically

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IPD70R900P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E

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MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET  Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol

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OB2530P High Precision CC/CV Primary-Side Power Switch GENERAL DESCRIPTION OB2530P is a high performance offline PSR power switch for low power AC/DC

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BC54PA-Q series 45 V, 1 A NPN medium power transistors Rev. 1 — 2 May 2022 Product data sheet 1. General description NPN medium power transistor in

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A G UIS, Rg 100% Tested

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G040P04M P-Channel Enhancement Mode Power MOSFET Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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STR-K670P SERVICE MANUAL Ver. 1.3 2006.05 US Model Canadian Model AEP Model UK Model E Model Australian Model • STR-K670P is the tuner and the ampli

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-. —. —-..-.. .,, — “,.. . . .- N-CHANNEL ISSUE 2MARCH ENHANCEMENT MODE VERTICAL DMOS FET 94 FEATURES * *R 60 Volt VcEo 0S(0.) = 5 ‘2 2N700

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FNK P-Channel Enhancement Mode Power MOSFET FNK3070PC/D Description The FNK3070PC/D uses advanced trench technology and design to provide excellent

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LA8100PN Ver.: C 2010.7.10 PC ATX u u u u u u u u u u u u u u u u u u ， PWM， PC ，、、 、PG。 494+339 494+339 494+339 25 Intel 1W PWM

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G050P03T P-Channel Enhancement Mode Power MOSFET Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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• Lead-Free PD - 94884 IRF9540PbF Document Number: 91078 12/11/03 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540Pb

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Features Switching Regulator • Non-isolated • Adjustable output voltage • 1-2AMP adjustable positive step down integrated switching regulator • Inter

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