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29 Hits
·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-...
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19 Hits
O Emitter Cutoff Current
VEB= 7V; IC=0
hFE1 DC Current Gain
IC=5A ; VCE= 5V
hFE2 DC Current Gain
IC=8A ; VCE= 5V
VCE(sat) Collector-Emitter Satu...
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14 Hits
·Output current in excess of 1.5A ·Output voltage of -12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot...
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14 Hits
·Output current in excess of 1A ·Output voltage of -5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to...
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8 Hits
·The chips are electrically insulated from bosom plate ·High surge current ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device
...
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7 Hits
YMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
900
V
VGS(th) Gate Threshold Voltage
VD...
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7 Hits
TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
350
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50...
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7 Hits
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ,IB= 0
120
V
VCE(sat) Collector-Emitter Saturation ...
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6 Hits
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
600
V
VGS(th) Gate Threshold Voltage
...