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20 inch Datasheet

20 inch

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3DD200 - Silicon Power Transistor

· 37 Hits ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Co...
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7812 - TO-220C Three Terminal Positive Voltage Regulator

· 29 Hits ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-...
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D209L - Silicon NPN Power Transistor

· 19 Hits O Emitter Cutoff Current VEB= 7V; IC=0 hFE1 DC Current Gain IC=5A ; VCE= 5V hFE2 DC Current Gain IC=8A ; VCE= 5V VCE(sat) Collector-Emitter Satu...
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20N03 - N-Channel MOSFET

· 17 Hits ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche teste...
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7912 - TO-220C Three Terminal Negative Voltage Regulator

· 14 Hits ·Output current in excess of 1.5A ·Output voltage of -12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot...
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7905 - TO-220C Three Terminal Negative Voltage Regulator

· 14 Hits ·Output current in excess of 1A ·Output voltage of -5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to...
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MBRB30120CT - Schottky Barrier Rectifier

· 14 Hits ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring...
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BYW51-200 - Ultrafast Rectifier

· 10 Hits ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variati...
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2SK4201 - N-Channel MOSFET Transistor

· 10 Hits ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100% ava...
Micron

MTFDDAA120MBB-2AE16ABYY - M500DC 1.8-Inch TCG Enterprise SATA NAND Flash SSD

· 8 Hits M500DC 1.8-Inch TCG Enterprise SATA NAND Flash SSD MTFDDAA120MBB-2AE16ABYY, MTFDDAA240MBB-2AE16ABYY, MTFDDAA480MBB-2AE16ABYY, MTFDDAA800MBB-2AE16ABYY ...
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6RI100G-120 - Three Phases Bridge

· 8 Hits ·The chips are electrically insulated from bosom plate ·High surge current ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device ...
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STP100N10F7 - TO-220 N-Channel MOSFET

· 8 Hits ·With To-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus...
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2SK4202 - N-Channel MOSFET Transistor

· 8 Hits ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @ VGS= 10V ·100% ava...
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2SK2039 - N-Channel MOSFET Transistor

· 7 Hits YMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VD...
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BU920P - Silicon NPN Power Transistor

· 7 Hits TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50...
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MP1620 - PNP Transistor

· 7 Hits Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Colle...
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2SD2083 - NPN Transistor

· 7 Hits PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ,IB= 0 120 V VCE(sat) Collector-Emitter Saturation ...
INCHANGE

IXTC200N085T - N-Channel MOSFET

· 7 Hits ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re...
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IRF620 - N-Channel Mosfet Transistor

· 6 Hits ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF620 ·DESCRITION ...
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2SK2026-01 - N-Channel MOSFET Transistor

· 6 Hits SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 600 V VGS(th) Gate Threshold Voltage ...
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