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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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-DK1203 OFF LINE SWITCH MODE POWER SUPPLY IC SPECIFICATION 1. DESCRIPTION The DK1203 is a secondary side flyback type AC-DC Switch Mode Power Contro

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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LTK5208 V1.3 LTK5208 27.9W F、   LTK5208 3Ω-7.9W、 F 。LTK5208 ， 7V。 LTK5208 ， D 、AB 、， IO ，， EN MODE , ，LTK5208 AB EMI 。 D 90%， D ，L

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Po

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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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LC1206A Rev.A AC/DC v v v 800V v v 0.10W v 、 v ， v OTP v 2013-V5 v 6W， 8W v ,, ² ² ² LC1206A 、 PWM ， 。 ， 、， ，， 。 ，。 800V， 90

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AXS2030 5.2W AB/D AXS2030、5.2W  AB/D AB/D。EMIFM  D： 。 －5.2W (VDD=5.0V, RL =2Ω，THD+N=10%)  AB： AXS2030PSRR －5.2W (VDD=5.0V, RL =2Ω，THD

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MIX2018E 5W F MIX2018E、5W F 。EMIFM 。 MIX2018EPSRR MIX2018ERF。 PWM、PCB ,。90%, MIX2018E 。  FM  D： －5W (VDD=5.0V, RL =2Ω，THD+N=10%)  F： －4.9W

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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Non-Synchronous PWM Boost Controller FP5207 General Description The FP5207 is boost topology switching regulator for wide operating voltage applicat

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IP5413 200mA 200mA TWS SOC 1   200mA  92%  ，   200mA  ，  4.20V、4.30V、4.35V 4.4V 4.20V，   4/2/1 LED   /，  20 µA  BO

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-SAMSUNG SDI Confidential Proprietary – Spec. No. INR18650-20R Version No. 1.2 In-Young Jang SPECIFICATION OF PRODUCT Lithium-ion rechargeable c

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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2N2220/2N2221/2N2222 300/600mA, Ultra-Fast Transient Response LDO Regulator 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in

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www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

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