20-Ch Datasheet | Specifications & PDF Download

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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-DK1203 OFF LINE SWITCH MODE POWER SUPPLY IC SPECIFICATION 1. DESCRIPTION The DK1203 is a secondary side flyback type AC-DC Switch Mode Power Contro

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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RT8206A/B High Efficiency, Main Power Supply Controllers for Notebook Computers General Description The RT8206A/B dual step-down, Switch Mode Power

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval

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XPT2046 Touch Screen Controller XPT2046 Data Sheet 2007.5 Copyright©2007, SHENZHEN XPTEK TECHNOLOGY CO.,LTD http://www.xptek.com.cn 1/30 Free Da

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KY-020 Tilt switch module KY-020 Tilt switch module Contents 1 Pircture

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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STR2000 Series Switching Type Features q q q q q Requires only 3 external components Small size and high efficiency Low switching noise Variable outpu

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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MIX2018E 5W F MIX2018E、5W F 。EMIFM 。 MIX2018EPSRR MIX2018ERF。 PWM、PCB ,。90%, MIX2018E 。  FM  D： －5W (VDD=5.0V, RL =2Ω，THD+N=10%)  F： －4.9W

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Description AP1P02AK -20V P-Channel Enhancement Mode MOSFET The AP1P02AK uses advanced trench technology to provide excellent RDS(ON), low gate char

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