20-Channel Datasheet | Specifications & PDF Download

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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LTK5208 V1.3 LTK5208 27.9W F、   LTK5208 3Ω-7.9W、 F 。LTK5208 ， 7V。 LTK5208 ， D 、AB 、， IO ，， EN MODE , ，LTK5208 AB EMI 。 D 90%， D ，L

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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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AXS2030 5.2W AB/D AXS2030、5.2W  AB/D AB/D。EMIFM  D： 。 －5.2W (VDD=5.0V, RL =2Ω，THD+N=10%)  AB： AXS2030PSRR －5.2W (VDD=5.0V, RL =2Ω，THD

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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MIX2018E 5W F MIX2018E、5W F 。EMIFM 。 MIX2018EPSRR MIX2018ERF。 PWM、PCB ,。90%, MIX2018E 。  FM  D： －5W (VDD=5.0V, RL =2Ω，THD+N=10%)  F： －4.9W

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

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ICN2038S (16-Channel Constant Current LED Sink Driver with Dual Latch) Description The ICN2038S is a 16-channel constant current sink output LED driv

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SM2082EGS LED QZOOITV1.5 SM2082EGS  a) OUT ， 100mA b) <± 4%  ：120Vac/220Vac    LED PCB  、  ：ESOP8   LED ，  LED SM2082EGS L

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Ordering number : ENN7067 Thick-Film Hybrid IC STK402-120 Two-Channel Class AB Audio Power Amplifier IC 80 W + 80 W Overview The STK402-000 series p

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http://www.ncepower.com Pb Free Product NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology tha

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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+ LTK5203 D 2014 V1.1 LTK5203 LTK5203 3W、D 、EMI、。 LTK5203 PAM8403 。 2.5V-5.5V，D90%， D ，PCB， 。 LTK5203 DRC （ Dynamic ran

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MIX2051 6W F MIX2051、6W F。 MIX2051PSRR MIX2051RF。 ， 。PWM 、PCB, 。90%， MIX2051 。 MIX2051，。 。POP ，。  D： －6W (5.5V, RL = 2 Ω，THD+N=10%) －3.9W (5.

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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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IRF9520 Data Sheet July 1999 File Number 2281.3 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guara

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