20C Datasheet | Specifications & PDF Download

isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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F16C20A thru F16C60A ® F16C20A thru F16C60A Pb Free Plating Product Pb 16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode Feature Fa

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F12C20C thru F12C60C ® F12C20C thru F12C60C Pb Pb Free Plating Product 12.0 Ampere Common Cathode Fast Recovery Rectifier Diode Feature Fast swi

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INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 16F020C * ： ，UPS DC-DC * ： ： A1. K. A2

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INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator 7905 FEATURES ·Output current in excess of 1A ·Output voltage of -5V ·Internal

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ November 2013 Features • 9.5 A,

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MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-

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UNISONIC TECHNOLOGIES CO., LTD SFR1020C ULTRA-FAST RECOVERY RECTIFIER DIODES  DESCRIPTION UTC SFR1020C is dual center tap rectifier suited for high

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MPQ4320C 42V Load Dump Tolerant, 0.5A, Ultra-Compact, Synchronous Step-Down Converter, AEC-Q100 Qualified DESCRIPTION The MPQ4320C is a configurable-

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FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ November 2013 Features • 9.5 A,

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SMD Power Inductor 0420CDMC/DS Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivit

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MOSPEC Switchmode Dual Fast Recovery Power Rectifiers Designed for use in switching power supplies. inverters and as free wheeling diodes. These state

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Diode Silicon Carbide Schottky Diode IDM08G120C5 5th Generation thinQ ™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-07-22 Industrial Power

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www.ti.com TMS320F2809, TMS320F2808, TMS320F2806, TMS320F2802, TMS320F2801, TMS320C2802, TMS320F2809, TMS320F2808, TMS320F2806T,MTSM3S2302C02F820810,

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ■ 3000 Watt Peak Power ■ Dimension ■ Specification SMC (DO-214AB) Dim Millimeters Inches Min Max Min

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www.ti.com TMS320C28346, TMS320C28346-Q1, TMS320C28345, TMS320C28344 TTMMSS332200CC2288334436,, TTMMSS332200CC2288334436--QQ11,, TTMMSS332200CC228833

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SMBJ5.0 THRU SMBJ440CA E480232 Features • For Surface Mount Applicationsin Order to Optimize Board Space • Low Inductance • Fast Response Time: Typi

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 1Ω ID 3.5A G UIS, 100% Tested S

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