20G Datasheet | Specifications & PDF Download

U1620G thru U1660G ® U1620G thru U1660G Pb Pb Free Plating Product 16 Ampere Surface Mount Common Cathode Ultra Fast Recovery Rectifier Feature

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OPTREX LCD Module Technical Specification t4 U . m o c First Edition Mar 16, 2001 Final Revision Type No. w w w .D a S F-51320GNY-LY-AA a

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LCD Module Technical Specification Type No. F-51320GNY-LY-AFN First Edition Aug 25, 2005 Final Revision ****** Approved by (Quality Assurance Divisi

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OPTREX LCD Module Technical Specification First Edition Mar 16, 2001 Final Revision ****** Type No. F-51320GNY-LY-AA Approved by (Production Div.)

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Shape B-1020X, B-1C2CX Part No. B-1020E B-1020G B-1020Y LIGHT BAR Chip Raw Emitted Material Color GaAsP/GaP Hi.effi Red GaP Green GaAsP/GaP

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30N20G-VB TO263 30N20G-VB TO263 Datasheet N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VG

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Description AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02CDF uses advanced trench technology to provide excellent RDS(ON), low gate

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LCD Module Technical Specification Type No. F-51320GNB-LW-AEN First Edition Aug 25, 2005 Final Revision ****** Approved by (Quality Assurance Divisi

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IDWD20G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky Diode IGCS1i3CRD6i5odUe8W2 Features  No reve

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D10040220G TH 401000 MHz GaAs Power Doubler Hybrid D10040220GTH 40-1000MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description The D10

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DATA SHEET www.onsemi.com Switch-mode Power Rectifiers MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, This series is designed for use in swit

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MS2H32120G1 MS2H32120G1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -Hi

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MS2H40120G1 MS2H40120G1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -Hi

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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SSC8120GS8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8   Ge

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