20N20 Datasheet | Specifications & PDF Download

BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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isc N-Channel MOSFET Transistor 20N20 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤180mΩ ·Fast Switching Speed ·100% avalanche tested ·Min

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 V= DSS ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns

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ECW20N20 N CHANNEL LATERAL MOSFET N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth

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HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 V= DSS ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns

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STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET™ II MOSFET DATA BRIEF Table 1: General Feat

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ECF20N20 HIGH POWER 250W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.70 1.50 11.60 +0.3 25.00 10.90 + 0.1 3 3

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Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 (Electrically Isolated Back Surface) Single MO

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Analog Power N-Channel 200-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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ECW20N20-Z N CHANNEL LATERAL MOSFET N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidt

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N-Channel 200 V (D-S) MOSFET DTU20N20 www.din-tek.jp PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.048 at VGS = 10 V ID (A) 20 TO-252 D FEATURES •

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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PolarTM HiPerFETTM Power MOSFET IXFH120N20P IXFK120N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM

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STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET™ II MOSFET DATA BRIEF Table 1: General Feat

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SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description This voltage controlled Solidtron (VCS) discharge

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PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IX

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Swi

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