MTW20N50E Preferred Device Power MOSFET 20 Amps, 5.
Vishay
SiHH20N50E - E Series Power MOSFET
www.vishay.com SiHH20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC.
Fuji Electric
FML20N50ES - N-CHANNEL SILICON POWER MOSFET
http://www.fujisemi.com FML20N50ES Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More control.
Vishay
SiHB20N50E - E Series Power MOSFET
www.vishay.com SiHB20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC.
ON Semiconductor
MTY20N50E - Power MOSFET
MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide en.
ON Semiconductor
20N50E - MTW20N50E
MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en.
Motorola
MTV20N50E - TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV20N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface .
Fuji Electric
FMH20N50E - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMH20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
Fuji Electric
FMH20N50ES - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMH20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.
Fuji Electric
FMP20N50E - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMP20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
Fuji Electric
FMP20N50ES - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMP20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.
Fuji Electric
FMV20N50ES - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMV20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.
INCHANGE
FMH20N50E - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested.
Silikron
SMG120N50E1 - IGBT
Main Product Characteristics: VCES 1250V IC 50A VCE(sat) 1.9V GC E Features and Benefits: Trench FS technology offering High speed switchi.
NXP
PHW20N50E - PowerMOS transistors Avalanche energy rated
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St.
Intersil Corporation
HGTH20N50E1 - N-Channel IGBT
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM.
ON Semiconductor
MTW20N50E - Power MOSFET
MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en.
Wing On
PFW20N50E - N-Channel MOSFET
Nov 2010 PFZ20N50E / PFW20N50E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitanc.
Wing On
PFZ20N50E - N-Channel MOSFET
Nov 2010 PFZ20N50E / PFW20N50E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitanc.