20N50E Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en

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MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en

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Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitanc

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV20N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface

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Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitanc

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MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide en

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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www.DataSheet.co.kr FMV20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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www.DataSheet.co.kr FMP20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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www.vishay.com SiHA20N50E Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V)

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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM

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Main Product Characteristics: VCES 1250V IC 50A VCE(sat) 1.9V GC E Features and Benefits:  Trench FS technology offering  High speed switchi

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www.DataSheet.co.kr FMP20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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www.vishay.com SiHG20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

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http://www.fujisemi.com FML20N50ES Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More control

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www.DataSheet.co.kr FMH20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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www.DataSheet.co.kr FMV20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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