20N50E Datasheet | Specifications & PDF Download

MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en

(17 views)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

(14 views)

(13 views)

www.DataSheet.co.kr FMP20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

(12 views)

HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM

(9 views)

www.DataSheet.co.kr FMP20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

(8 views)

http://www.fujisemi.com FML20N50ES Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More control

(8 views)

Main Product Characteristics: VCES 1250V IC 50A VCE(sat) 1.9V GC E Features and Benefits:  Trench FS technology offering  High speed switchi

(8 views)

www.DataSheet.co.kr FMH20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

(7 views)

www.DataSheet.co.kr FMV20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

(7 views)

www.DataSheet.co.kr FMV20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

(7 views)

www.DataSheet.co.kr FMH20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

(6 views)

www.vishay.com SiHA20N50E Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V)

(6 views)

www.vishay.com SiHH20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC

(5 views)

www.vishay.com SiHG20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

(5 views)

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

(4 views)

Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitanc

(4 views)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV20N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface

(4 views)

www.vishay.com SiHB20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

(4 views)

MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en

(3 views)