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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K120T025 K indicates BGA configuration. For other mounting

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K120T025 K indicates BGA configuration. For other mounting

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R1141Q SERIES 120mA LDO REGULATOR NO.EA-082-111027 OUTLINE The R1141Q Series consist of CMOS-based voltage regulator ICs with high output voltage a

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14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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M3TEK IT76620M 23V/2A High Efficiency Synchronous Rectified Step-Down DC/DC Converter DESCRIPTION The IT76620M is a high efficiency synchronous ste

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EBRP20M300CT TO-220AB Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Swi

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EBRP20M200CT TO-220AB Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Swi

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KA75XXX Voltage Detector www.fairchildsemi.com Features • Detecting Against Error Operations At The Power On/off. • Resetting Function For The Low V

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® TBA820M 1.2W AUDIO AMPLIFIER DESCRIPTION The TBA820M is a monolithic integrated audio amplifier in a 8 lead dual in-line plastic package. It is

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MIP2M20MS Silicon MOS FET type integrated circuit  Features  AC input detecting function By connecting SO terminal, it is able to select functions

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® ® ADC-305 8-Bit, 20MHz CMOS A/D Converters FEATURES • • • • • • • 8-bit resolution, 20MHz min. sampling rate ±½LSB max. differential nonlinearity

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S Features • Typ. RDS(on) = 13 mW @

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AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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BTS 441 R Smart Highside Power Switch One Channel: 20mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Cu

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LTC3632 High Efficiency, High Voltage 20mA Synchronous Step-Down Converter FEATURES n Wide Input Voltage Range: Operation from 4.5V to 50V n Overvo

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Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC NXH003P120M3F2PTHG The NXH

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FEATURES n 3.3V Supply Voltage n 20Mbps Maximum Data Rate n No Damage or Latchup Up to ±15kV HBM n High Input Impedance Supports 256 Nodes (C-, I‑Grad

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