2183 Datasheet | Specifications & PDF Download

ELECTRONIC GIANT EG2183 Datasheet High-power MOS transistor, IGBT transistor gate driver chip 2016 © Yijing Microelectronics Co., Ltd. All rights re

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IP2183 9 、 USB IC QC3.0/QC2.0，FCP，SCP，AFC，MTK PE+ 2.0/1.1，Apple 2.4A，BC1.2 1. 2.  9 USB  （QC3.0/QC2.0，FCP，SCP， AFC，MTK PE+ 2.0/1.1 Apple

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Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

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Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

Rating: 1 ★ (7 votes)

Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

Rating: 1 ★ (7 votes)

Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

Rating: 1 ★ (7 votes)

2ED2183 (4) S06F (J) 2ED2183 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features • Unique Infineon Thin-Film-Silicon

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AOZ52183QI High-Current, High-Performance Smart Power Stage for Notebook CPU Power General Description The AOZ52183QI is a general-purpose Smart Powe

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Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

Rating: 1 ★ (6 votes)

Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

Rating: 1 ★ (6 votes)

GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The PG2183T6C is a GaAs MMIC SP4T (Single Pole Four Throw) switch which

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WWW.ORIENT-CHIP.COM OCP2183 Low-Cost, 3A, 4.5V to 24V Input, 360kHz, PWM Step-Down Synchronous Rectified DC-DC Regulator ◼ General Description The

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Data Sheet No. PD60173 rev.H IR2183(4)(S) & (PbF) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant t

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www.DataSheet4U.com

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Plastic Film Capacitors Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame reta

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Plastic Film Capacitors Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame reta

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter saturation : VCE(sat) = −1.0 V（max）

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SSSS7777MMMM333322221331866833335555MMMM 11MMxx3366 && 22MMxx1188 NNTTSSRRAAMM FFllooww--TThhrroouugghh 36Mb NTSRAM Flow-Through Specification NETS

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SS77NN332233663311MM SS77NN332211883311MM 11MMxx3366 && 22MMxx1188 NNTTSSRRAAMM SSyynncc--PPiippeelliinneedd BBuurrsstt 36Mb NTSRAM Sync-Pipelined B

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S7B323635M SS77BB332213863355MM S7B321835M 1Mx36 & 2Mx18 Flow-Trough SRAM 1Mx36 & 2Mx18 Flow-Trough SRAM 36Mb Sync. Flow-Trough SRAM Specification

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