2200 Datasheet | Specifications & PDF Download

Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

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CYBLE-222005-00 EZ-BLE Creator Module Not Recommended for New Designs EZ-BLE Creator Module General Description The Cypress CYBLE-222005-00 is a ful

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Model # LCFS1053 1100 to 2200 MHz Frequency Synthesizer Low Phase Noise in a Lower Cost Package Features • Low Phase Noise: -104 dBc/Hz (100 kHz offs

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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iR3300/iR2800/iR2200 Copying Guide About the Manuals for the Machine The manuals for this machine are divided as follows. Please read them to suit y

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YANGZHOU POSITIONING TECH. CO., LTD ZP3500A 2200V ***************************************************************************************************

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Ope

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CYBLE-022001-00 EZ-BLE™ Creator Module EZ-BLE™ Creator Module General Description The Cypress CYBLE-022001-00 is a fully certified and qualified modu

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Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caus

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FNK22001A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001A uses advanced trench technology and design to provide excellent RDS(O

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www.DataSheet4U.com PRELIMINARY FEMTOCLOCKS™ CRYSTAL-TOLVHSTL FREQUENCY SYNTHESIZER ICS8422002I-01 Features • • • • • • • • Two LVHSTL outputs (VOH

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Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type devi

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FNK22001AF FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001AF uses advanced trench technology and design to provide excellent RDS

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High Voltage Standard Rectifier Single Diode Part number DNA30E2200PC 13 DNA30E2200PC VRRM I FAV VF = = = 2200 V 30 A 1.24 V Backside: anode Fea

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® WON-TOP ELECTRONICS B40C3700/2200 – B500C3700/2200 3.7A SINGLE PHASE BRIDGE RECTIFIER Pb Features  Diffused Junction  Low Forward Voltage Drop 

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® WON-TOP ELECTRONICS SR2150 – SR2200 2.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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CMOS SyncFIFO™ 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 Integrated Device Technology, Inc. IDT72420 IDT72200 IDT72210 IDT72220 IDT72

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Multilayer Chip Beads MLB-201209-A SERIES MLB-201209-A SERIES DIMENSION: FERRITE TERMINAL D A: 2.0±0.20 (0.079±0.008) B: 1.2±0.20 (0.047±0.008) C:

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Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caus

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Be sure to visit ChipDocs site for more information http://www.chipdocs.com Be sure to visit ChipDocs site for more information http://www.chipdocs.c

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