2301 Datasheet | Specifications & PDF Download

GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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PAM2301 800mA Step-Down DC-DC Converters Features n n n n n n n n n n n General Description The PAM2301 is a step-down current-mode, DCDC converter.

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ILI2301S ILI2301S Capacitive Touch Sensor Controller Specification Version: V1.00 Date: 2014/12/25 ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei

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On-Bright Electronics Co., Ltd. 0755-82584090/83587431 OB2301W High Performance synchronous rectifier GENERAL DESCRIPTION OB2301W is a high performa

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‹ DESCRIPTION MT2301 P- Channel Enhancement Mode MOSFET The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produce

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APM2301 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ V =-10V GS RDS(ON)=100mΩ(typ.) @ V

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density

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P-Channel Enhancement Mode Power MOSFET MX2301 DESCRIPTION The MX2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge

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Alfa-MOS Technology General Description AFP2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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NOA2301W Digital Proximity Sensor with Interrupt Description The NOA2301W combines an advanced digital proximity sensor and LED driver coupled with

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Analog Power P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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PE2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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1AYW SOT-23-3L 0.4 3.8 0.9 0.8

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PE2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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MITSUBISHI M62301SP,FP 10~12-BIT 4CH INTEGRATING A-D CONVERTER DESCRIPTION M62301 semiconductor integrated circuit forms an integr

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NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package desig

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NOT RECOMMENDED FOR NEW DESIGN CONTACT US PAM2301 800mA STEP-DOWN DC-DC CONVERTER Description The PAM2301 is a step-down current-mode, DC-DC conver

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http://www.ncepower.com Pb Free Product NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technolog

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SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) ● RDS(ON) ＜ 190mΩ (VGS =-2.5V) ● Pb−Fr

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