GOFORD 2301 DESCRIPTION The 2301 uses advanced t.
JinYu
SI2301 - P-Channel MOSFET
20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr.
Matsuki
ME2301DC-G - P-Channel 20V (D-S) MOSFET
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME2301DC is the P-Channel logic enhancement mode power field eff.
LRC
LP2301ALT1G - P-Channel MOSFET
LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density.
GFD
2301 - P-Channel Enhancement Mode Power MOSFET
GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
ILITEK
ILI2301S - Capacitive Touch Sensor Controller
ILI2301S ILI2301S Capacitive Touch Sensor Controller Specification Version: V1.00 Date: 2014/12/25 ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei.
On-Bright Electronics
OB2301W - High Performance synchronous rectifier
On-Bright Electronics Co., Ltd. 0755-82584090/83587431 OB2301W High Performance synchronous rectifier GENERAL DESCRIPTION OB2301W is a high performa.
Anpec Electronics
APM2301 - P-Channel MOSFET
APM2301 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ V =-10V GS RDS(ON)=100mΩ(typ.) @ V .
Mitsubishi
M62301FP - 10~12-BIT 4CH INTEGRATING A-D CONVERTER
MITSUBISHI
H&M Semiconductor
HM2301B - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
Supertex
HV2301 - Enhanced Analog Switch
Supertex inc. HV2301 Low Charge Injection, 8-Channel, High Voltage, Enhanced Analog Switch with Bleed Resistors Features ►► HVCMOS technology for h.
Anpec Electronics
APM2301CA - P-Channel MOSFET
APM2301CA Features • -20V/-3A RDS(ON)= 70mΩ (max.) @ VGS= -4.5V RDS(ON)= 115mΩ (max.) @ VGS= -2.5V R= DS(ON) 250mΩ (max.) @ V= GS -1.8V • R.
JCST
CJ2301 - MOSFETS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFE.
Siemens Semiconductors
V23016-D0xxx-Ax9x - Kleinschaltrelais N
www.DataSheet4U.com Kleinschaltrelais N V23016-A0555 Mit 1 Wechsler oder 1 Doppelschließer Staubgeschützt Mit Flachsteckern, passend für Steckhülsen .
Mos-Tech Semiconductor
MT2301 - P-Channel Enhancement Mode Field Effect Transistor
MT2301 MOS-TECH Semiconductor Co.,LTD MT2301 Single P-Channel Power MOSFET General Description This P-Channel Power MOSFET is pro duced using MOS-TE.
Anpec Electronics
APM2301A - P-Channel MOSFET
APM2301A Features • -20V/-2.8A, RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=98mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Le.
LRC
LP2301BLT1G - P-Channel MOSFET
LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150.
Semtron
STP2301 - P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET STP2301 -20V P-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STP2301 is the P-Channel logic enhance.
H&M Semiconductor
HM2301A - P-Channel Enhancement Mode Power MOSFET
HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge.
