24N50 Datasheet | Specifications & PDF Download

LinearTM Power MOSFET w/ Extended FBSOA IXTH24N50L N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE:

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FDA24N50 — N-Channel UniFETTM MOSFET FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 mΩ Features • RDS(on) = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12

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HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDM

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MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDG

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES 500 V 600 V I C(25) 48 A 48 A VCE(sat) 2.3 V 2.5 V tfi 80 ns 80 ns Preliminary data www.DataSheet4U.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE:

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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GENERAL DESCRIPTION GPT24N50 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced

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FQA24N50 — N-Channel QFET® MOSFET June 2014 FQA24N50 N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VG

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on)

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MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDG

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-

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Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-powe

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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