.
Winbond
25Q256JWEQ - 1.8V 256M-BIT SERIAL FLASH MEMORY
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NXP
P87C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
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Mitsubishi
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'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DES.
Advanced Micro Devices
28F256 - 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory
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MACRONIX
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NXP
82S23 - 256-bit TTL bipolar PROM
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AMIC Technology
A290021 - 256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
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Siemens Semiconductor Group
HYB314265BJ-50 - 256K x 16-Bit EDO-Dynamic RAM
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Cypress Semiconductor
FM18W08 - 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory
FM18W08 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectr.
STMicroelectronics
M27V201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
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STMicroelectronics
M27V256 - 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V256 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION:.
STMicroelectronics
M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .
STMicroelectronics
M27C256B - 256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B 256 Kbit (32Kb × 8) UV EPROM and OTP EPROM Feature summary ■ 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consu.
Macronix International
IMX29F002 - 2M-BIT [256K x 8] CMOS FLASH MEMORY
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Samsung semiconductor
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..
Samsung semiconductor
K7B803625B - 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
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Samsung
K9XXG16UXM-K - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.
Sanyo
LC36256AL-10 - 256 K (32768 words x 8 bits) SRAM
Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A.