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：010-8287 3941/42/43/44 ：010-8287 3945 http://www.echip.com.cn 256Mb Synchronous DRAM Specification Z2V56S20BTP Z2V56S30BTP Z2V56S40BTP Deutron Elect

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. U 184pin One Bank Unbuffered DDR SDRAM MODULE 4 t e e Features h S a t a D . w w w • 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 32Mx64 D

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www.DataSheet4U.com NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS NT5DS16M16CG Features CAS Latency and Frequency CA

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K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC

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IS42S83200L, IS42S16160L IS45S83200L, IS45S16160L 32Meg x 8, 16Meg x16 ADVANCED INFORMATION 256Mb SYNCHRONOUS DRAM DECEMBER 2021 FEATURES • Cloc

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PRELIMINARY DATA SHEET 256MB DDR SDRAM S.O.DIMM HB54A2568KN-A75B/B75B/10B (32M words × 64 bits, 2 Banks) Description The HB54A2568KN is Double Data R

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PRELIMINARY DATA SHEET 256MB DDR SDRAM S.O.DIMM HB54A2568KN-A75B/B75B/10B (32M words × 64 bits, 2 Banks) Description The HB54A2568KN is Double Data R

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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0

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IS42S32800G IS45S32800G 8M x 32 256Mb SYNCHRONOUS DRAM AUGUST 2012 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all sign

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DATA SHEET 256MB Unbuffered SDRAM DIMM EBS25UC8APFA (32M words × 64 bits, 1 bank) Description The EBS25UC8APFA is 32M words × 64 bits, 1 bank Synchro

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www.DataSheet4U.com Data Sheet, Rev. 1.2, April 2004 HYB25L256160AF HYE25L256160AF 256MBit Mobi le- RAM Mobile-RAM Commercial Temperature Range E x

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

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IS43R83200F IS43/46R16160F, IS43/46R32800F 8Mx32, 16Mx16, 32Mx8 PRELIMINARY INFORMATION 256Mb DDR SDRAM MARCH 2014 FEATURES DEVICE OVERVIEW •

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eorex Preliminary EM488M3244LBB 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power

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HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin U

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HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin U

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K4N56163QG 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 1.4 December 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG P

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DDR SDRAM 256Mb F-die (x8, x16) DDR SDRAM 256Mb F-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16

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NT256D64S88ABG 256MB : 32M x 64 PC2700 Unbuffered DIMM 184pin One Bank Unbuffered DDR SDRAM MODULE Based on DDR333 32Mx8 SDRAM Features • Performance

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