K4S560432E-TC75 (Samsung semiconductor)
256Mb E-die SDRAM Specification
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.3 September. 2003
* Samsung Electronics reserves the right t
(3 views)
K4C561638C-TCD4000 (Samsung)
256Mb Network-DRAM
K4C5608/1638C
256Mb Network-DRAM
256Mb Network-DRAM Specification Version 0.7
- 1 -
REV. 0.7 Aug. 2003
K4C5608/1638C
Revision History
Version 0.0
(3 views)
K4J55323QF-GC (Samsung)
256Mbit GDDR3 SDRAM
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe
(3 views)
K4J55323QF-GC20 (Samsung)
256Mbit GDDR3 SDRAM
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe
(3 views)
H5MS2562JFR (Hynix Semiconductor)
Mobile DDR SDRAM 256Mbit (16M x 16bit)
256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O
Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM
Memory Cell Array
- Organized as 4banks of
(3 views)
W948D6KBHX (Winbond)
256Mb Mobile LPDDR
W948D6KBHX
256Mb Mobile LPDDR
Table of Contents-
1. GENERAL DESCRIPTION
(3 views)
HB54A2568KN (Elpida Memory)
256MB DDR SDRAM S.O.DIMM
PRELIMINARY DATA SHEET
256MB DDR SDRAM S.O.DIMM
HB54A2568KN-A75B/B75B/10B (32M words × 64 bits, 2 Banks)
Description
The HB54A2568KN is Double Data R
(2 views)
HB54A2568KN-A75B (Elpida Memory)
256MB DDR SDRAM S.O.DIMM
PRELIMINARY DATA SHEET
256MB DDR SDRAM S.O.DIMM
HB54A2568KN-A75B/B75B/10B (32M words × 64 bits, 2 Banks)
Description
The HB54A2568KN is Double Data R
(2 views)
IS42S32800J (ISSI)
256Mb SYNCHRONOUS DRAM
IS42S32800J IS45S32800J
8M x 32
256Mb SYNCHRONOUS DRAM
DECEMBER 2021
FEATURES • Clock frequency:166, 143, 133 MHz • Fully synchronous; all signa
(2 views)
IS42S32800G (ISSI)
256Mb SYNCHRONOUS DRAM
IS42S32800G IS45S32800G
8M x 32
256Mb SYNCHRONOUS DRAM
AUGUST 2012
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all sign
(2 views)
MTFDDAT256MBF (Micron)
M600 mSATA NAND Flash SSD
M600 mSATA NAND Flash SSD Features
M600 mSATA NAND Flash SSD
MTFDDAT128MBF, MTFDDAT256MBF, MTFDDAT512MBF
Features
• Micron® 16nm MLC NAND Flash • RoH
(2 views)
EBS25EC8APFA (Elpida Memory)
256MB Unbuffered SDRAM DIMM
DATA SHEET
256MB Unbuffered SDRAM DIMM
EBS25EC8APFA (32M words × 72 bits, 1 bank)
Description
The EBS25EC8APFA is 32M words × 72 bits, 1 bank Synchro
(2 views)
EBS25UC8APMA (Elpida Memory)
256MB SDRAM Micro DIMM
DATA SHEET
256MB SDRAM Micro DIMM
EBS25UC8APMA (32M words × 64 bits, 1 bank)
Description
The EBS25UC8APMA is 32M words × 64 bits, 1 bank Synchronous
(2 views)
EBS26UC6APS (Elpida Memory)
256MB SDRAM S.O.DIMM
DATA SHEET
256MB SDRAM S.O.DIMM
EBS26UC6APS (32M words × 64 bits, 2 bank)
Description
The EBS26UC6APS is 32M words × 64 bits, 2 banks Synchronous Dyn
(2 views)
DS_M368L3223DTL (Samsung semiconductor)
256MB DDR SDRAM MODULE
M368L3223DTL
184pin Unbuffered DDR SDRAM MODULE
256MB DDR SDRAM MODULE
(32Mx64 based on 32Mx8 DDR SDRAM)
Unbuffered 184pin DIMM 64-bit Non-ECC/Pari
(2 views)
IS25LP256 (ISSI)
256MBIT SERIAL FLASH MEMORY
ADVANCED INFORMATION
IS25LP256
256MBIT
3V SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI & DTR INTERFACE ADVANCED DATA SHEET
ADVANCED INFORMATION
256M
(2 views)
HYB25L256160AF (Infineon Technologies AG)
256MBit Mobile-RAM
www.DataSheet4U.com
Data Sheet, Rev. 1.2, April 2004
HYB25L256160AF HYE25L256160AF
256MBit Mobi le- RAM Mobile-RAM Commercial Temperature Range E x
(2 views)
K4S560832E-UC75 (Samsung)
SDRAM 256Mb E-die
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
54 TSOP-II with Pb-Free (RoHS compliant)
Revision 1.3 August 2004
* Sams
(2 views)
K4S560832C (Samsung semiconductor)
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832C
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Electronics reserves the right to
(2 views)
K4S560832D (Samsung semiconductor)
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 May. 2003
* Samsung Electronics reserves the right to
(2 views)