K4S560832D Datasheet (Samsung semiconductor) - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S560832D, 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c

K4S560832D Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are