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K4S560832D Datasheet - Samsung semiconductor

K4S560832D 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c.

K4S560832D Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S560832D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S560832D

Manufacturer:

Samsung semiconductor

File Size:

118.69 KB

Description:

256mbit sdram 8m x 8bit x 4 banks synchronous dram lvttl.

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K4S560832D K4S560832D 256Mbit SDRAM 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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