K4S560832D - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S560832D
Manufacturer	Samsung semiconductor
File Size	118.69 KB
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S560832D Datasheet
Additional preview pages of the K4S560832D datasheet.

Product details

Description

The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K Cycle.

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Other Datasheets by Samsung semiconductor

K4S560832A - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832E-NC75 - SDRAM 256Mb E-die
K4S560832E-NCL75 - SDRAM 256Mb E-die
K4S560832E-TC75 - 256Mb E-die SDRAM Specification

Published: Apr 7, 2005 |