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K4S560832E-TC75

256Mb E-die SDRAM Specification

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part Samsung Semiconductor K4S560832E-TC75 Bristol Electronics 13 0
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K4S560832E-TC75 Datasheet (198.76 KB)

Preview of K4S560832E-TC75 PDF Datasheet

Datasheet Details

Part number:

K4S560832E-TC75

Manufacturer:

Samsung semiconductor

File Size:

198.76 KB

Description:

256mb e-die sdram specification

K4S560832E-TC75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S560832E-TC75 General Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of .

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K4S560832E-TC75 256Mb E-die SDRAM Specification Samsung semiconductor

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K4S560832E-TC75 Distributor

Distributor
Samsung Semiconductor
K4S560832E-TC75
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
Quest Components
9 In Stock
Qty : 6 units
Unit Price : $4.13