K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S560832B
Manufacturer	Samsung semiconductor
File Size	131.52 KB
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S560832B Datasheet
Additional preview pages of the K4S560832B datasheet.

Product details

Description

The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K Cycle.

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Other Datasheets by Samsung semiconductor

K4S560832A - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832E-NC75 - SDRAM 256Mb E-die
K4S560832E-NCL75 - SDRAM 256Mb E-die
K4S560832E-TC75 - 256Mb E-die SDRAM Specification

Published: Apr 7, 2005 |