Datasheet4U Logo Datasheet4U.com

K4S560832A

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S560832A Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S560832A General Description

The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S560832A Datasheet (126.92 KB)

Preview of K4S560832A PDF

Datasheet Details

Part number:

K4S560832A

Manufacturer:

Samsung semiconductor

File Size:

126.92 KB

Description:

256mbit sdram 8m x 8bit x 4 banks synchronous dram lvttl.
K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999
* Samsung Electronics reserves the right.

📁 Related Datasheet

K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to .

K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to.

K4S560832D - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to .

K4S560832E-NC75 - SDRAM 256Mb E-die (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves .

K4S560832E-NCL75 - SDRAM 256Mb E-die (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves .

K4S560832E-TC75 - 256Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right t.

K4S560832E-TL75 - 256Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right t.

K4S560832E-UC75 - SDRAM 256Mb E-die (Samsung)
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS pliant) Revision 1.3 August 2004 * Sams.

TAGS

K4S560832A 256Mbit SDRAM 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Image Gallery

K4S560832A Datasheet Preview Page 2 K4S560832A Datasheet Preview Page 3

K4S560832A Distributor