K4S560832A, K4S Datasheet - Samsung semiconductor

K4S560832A, K4S, 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep.1999 * Samsung Electronics reserves the right.
The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high p.

datasheet Preview Page 1 from Datasheet4u.com

K4S-560832.pdf

K4S560832A Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S560832A, K4S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4S560832A, K4S

Manufacturer:

Samsung semiconductor

File Size:

126.92 KB

Description:

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

Note:

This datasheet PDF includes multiple part numbers: K4S560832A, K4S.
Please refer to the document for exact specifications by model.

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S560832A-TC/L75 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 8M x 8 Sense

K4S560832A Distributors

📁 Related Datasheet

K4S560832E-UC75 K4S560432E-UC75 K4S561632C K4S561632E-UC60 K4S561632E-UC75 K4S561632H

📌 All Tags

K4S 256Mbit SDRAM 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Samsung semiconductor K4S560832A-like datasheet