Part number:
K4S560832E-TL75
Manufacturer:
Samsung semiconductor
File Size:
198.76 KB
Description:
256mb e-die sdram specification.
K4S560832E-TL75_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S560832E-TL75
Manufacturer:
Samsung semiconductor
File Size:
198.76 KB
Description:
256mb e-die sdram specification.
K4S560832E-TL75, 256Mb E-die SDRAM Specification
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September.
2003 Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.3 September.
2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.0 (May.
2003) - First release.
Revision 1.1 (June.
2003) - Correct Typo Revision 1.2 (June.
2003) - Added 166MHz speed bin in x16 Revision 1.3 (September.
2003) - Corrected typo in ordering information.
CMOS
K4S560832E-TL75 Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
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