25N Datasheet | Specifications & PDF Download

Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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G025N03T N-Channel Enhancement Mode Power MOSFET Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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WESTCODE An IXYS Company Date:- 4 Aug, 2004 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0500KC25# Absolute Maximum Ratings

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BL25N60 Power MOSFET 1．Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the con

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UNISONIC TECHNOLOGIES CO., LTD 25N20 25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N20 is an N-channel enhancement mode po

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JR25N65 Power MOSFET 1．Description JR25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the co

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() CRST025N08N,CRSS023N08N SkyMOS1 N-MOSFET 85V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on)

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N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB25NM60N-1 STF25NM60N STP25NM60N

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene

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Speciality Magnetic Components Qualified to ISO 9001:2000 PCB Mounting Hall Effect Current Transformer Type HTP25NP The HTP25NP is a closed loop Hall

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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BGA525N6 Broadband Low Power LNA for L1/L2/L5 GNSS Applications Features • Operation frequencies 1164 to 1615 MHz • Multiple-Operating Modes for diff

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-

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N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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Public IPTC025N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) •

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STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Feat

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