25N Datasheet | Specifications & PDF Download

Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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() CRST025N08N,CRSS023N08N SkyMOS1 N-MOSFET 85V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on)

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UNISONIC TECHNOLOGIES CO., LTD 25N20 25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N20 is an N-channel enhancement mode po

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N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB25NM60N-1 STF25NM60N STP25NM60N

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SMD Power Inductor CD75/T125 RoHS Dimension - [mm] φ7.8±0.3 7.0±0.3 5.0±0.5 φ7.8 7.0 Land pattern and Schematics - [mm] PART OF ELECTRODE 7.5 2

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VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V , M2, TO-247-3L NTHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @

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www.DataSheet4U.com PHP/PHB225NQ04T N-channel TrenchMOS™ standard level FET Rev. 01 — 12 May 2004 Product data 1. Product profile 1.1 Description N-c

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HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode f

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www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene

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Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L NVBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 1

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MOSFET – Power, N-Channel, Automotive, SUPERFET) III, Easy-Drive 650 V, 25 mW NVCR8LS025N65S3A Features • Typical RDS(on) = 19.9 mW at VGS = 10 V • T

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW

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