27-29 Datasheet | Pinout, Features, Price Comparison & PDF

2SK2927 Silicon N Channel MOS FET High Speed Power Switching ADE-208-550D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. •

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

Advisory May 1999 Clarification to the Serial I/O Control Register Description for the DSP1620/27/28/29 Devices Active Clock Frequency The purpose of

PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

Advisory May 1999 Clarification to the Serial I/O Control Register Description for the DSP1620/27/28/29 Devices Active Clock Frequency The purpose of

PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

www.DataSheet4U.com Rev 1; 2/06 LVD SCSI 27-Line Regulator General Description The DS2129 is a triple-output voltage regulator for 27-line, low-volt

TurboMAP Analog Manifold Air Pressure Sensor IC KP229E2701 Analog Absolute Pressure Sensor   Data Sheet Revision 1.0, 2010-09-01 Sense & Control Edit

RK2729 Brief Technical Reference Manual Rev 1.0 RK2729 Technical Reference Manual Brief Revision 1.0 Mar 2010 1/23 3/2/2010 RK2729 Brief Techn

NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation v

NPN Silicon AF Transistors BCX 54 … BCX 56 Features For AF driver and output stages q High collector current q Low collector-emitter saturation volt

PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

www.DataSheet4U.com M28975 ZipWirePlus G.shdsl Transceiver with Embedded Microprocessor Data Sheet 500054D November 2002 www.DataSheet4U.com Orde

PHA2729-300M Radar Pulsed Power Module 300W, 2.7-2.9 GHz, 100μs Pulse, 10%Duty Features Outline Drawing • Includes RC bias circuit • In-Phase comb

PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

M29DW127G 128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 to 3.6 V

NJM2729 Precision Operational Amplifier ■ FEATURES ■ PACKAGE OUTLINE ●Precision VIO=60µV max. VIO=100µV max. (Ta=-40ºC to +85ºC) ●Low Offset Dri

2N2696 (SILICON) 2N2927 PNP SILICON ANNULAR TRANSISTORS designed for use in medium-speed, non-saturated switching applications_ • High Collector-Emit