27-29 Datasheet | Specifications & PDF Download

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PH2729-150M Radar Pulsed Power Transistor—150 Watts 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features • • • • • • • • NPN Silicon Microwave Power Transisto

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* z-z -,--= 2 .---= --= -= =c r s an AMP company Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I .300 v2.00 (

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www.DataSheet4U.com M28975 ZipWirePlus G.shdsl Transceiver with Embedded Microprocessor Data Sheet 500054D November 2002 www.DataSheet4U.com Orde

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* an AMP company = = -E-= S‘,J =- = E .---- --= = = r - Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00

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PH2729-25M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base conf

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M/A-COM PHI, INC. PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY OUTLINE DRAWING FEATURES ∗ NPN Silicon Mi

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= =_ .---‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power

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AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABI

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Low-Cost 1.27W Audio Power Amplifier LN2990 ■ General Description The LN2990 is a Class-AB audio power amplifier designed for mobile phones and othe

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NJM2729 Precision Operational Amplifier ■ FEATURES ■ PACKAGE OUTLINE ●Precision VIO=60µV max. VIO=100µV max. (Ta=-40ºC to +85ºC) ●Low Offset Dri

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PH2729-110M Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base co

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PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base conf

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Data Sheet March 2000 DSP1629 Digital Signal Processor 1 Features s s Optimized for digital cellular applications with a bit manipulation unit for h

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PHA2729-300M Radar Pulsed Power Module 300W, 2.7-2.9 GHz, 100μs Pulse, 10%Duty Features Outline Drawing • Includes RC bias circuit • In-Phase comb

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PH2729-130M Radar Pulsed Power Transistor 130 W, 2.7—-2.9 GHz, 100 µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common bas

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www.DataSheet4U.com 293D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT®, Commercial, Surface Mount FEATURES • Terminations: 100 % Tin, st

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