2907A Datasheet | Specifications & PDF Download

PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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2N2907A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS

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2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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KSP2907A KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907

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PNP General-Purpose Transistor, 60 V PN2907A Description The PN2907A is 60 V PNP bipolar transistor designed for use as a general−purpose amplifier o

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2N2906A, L, UA, UB 2N2907A, L, UA, UB Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/291 • Available in JA

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2N2907AHR Datasheet Rad-hard 60 V, 0.6 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1)

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SM

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SM

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2907A/D Amplifier Transistor PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2907A MA

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UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP General Purpose Amplifier FEATURES This device is designed for use as a general purpose amplifier an

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SM

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MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LE

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC S

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2907A PNP switching transistor Product specification Supersedes data of September 1994 Fi

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® PN2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code PN2907A PN2907A-AP s Marking Package / Shipment PN2907A TO-92 / Bulk PN2907A

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V

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