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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM,

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2105C/D 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC™ PReP/CHRP Platf

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® WON-TOP ELECTRONICS 2KBP005M – 2KBP10M 2.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER Pb Features  Glass Passivated Die Construction  Low F

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M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM Feature summary ■ 5V ± 10% supply voltage in Read operation ■ Access time: 35ns ■ Low power con

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V

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32 Kb I2C CMOS Serial EEPROM N24C32 Description The N24C32 is a 32 Kb CMOS Serial EEPROM device, organized internally as 128 pages of 32 bytes each. T

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2KBP005M thru 2KBP10M, 3N253 thru 3N259 Crownpo Technology Glass Passivated Single-Phase Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Curre

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M93C86, M93C76, M93C66 M93C56, M93C46 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE® Serial Access EEPROM FEATURES SUMMARY s

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M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection FEATURES SUMMARY s Industry Standard M

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M95040 M95020, M95010 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock FEATURES SUMMARY s Compatible with SPI Bus Serial Interface (

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2104/D Advance Information 256KB and 512KB BurstRAM™ Secondary Cache Modules for P

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2002/D 256KB and 512KB BurstRAM™ Secondary Cache Module for PowerPC™ – Based System

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2004/D Advance Information 256KB and 512KB BurstRAM™ Secondary Cache Modules for P

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Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special des

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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Elektronische Bauelemente D2KB10 ~ D2KB100 100 ~ 1000 V 2.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant P

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