2Kx8 datasheet | Specifications & PDF Download

HY62CT08081E-DPI - 32Kx8bit CMOS SRAM

HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Marking

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Dense-Pac Microsystems

DPS128C32BV3 - 512kx8 High Speed CMOS SRAM

4 Megabit High Speed CMOS SRAM DPS128C32BV3 DESCRIPTION: The DPS128C32BV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem u

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Hynix Semiconductor

HY62CT08081E-DPC - 32Kx8bit CMOS SRAM

HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Marking

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Samsung semiconductor

KM23C4100DET - 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM

KM23C4100D(E)T 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access

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Hynix Semiconductor

HY62256AR2-I - 32Kx8bit CMOS SRAM

Data Sheet-sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm HY62256A-(I) Series 32Kx8bit CMOS SRAM Description Features The Fully static

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Samsung semiconductor

KM68257CL - 32Kx8 Bit High Speed Static RAM

KM68257C/CL Document Title PRELIMINARY CMOS SRAM 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. Operated at Commercial Tempera

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Samsung semiconductor

KM23C4000DTY - 4M-Bit (512Kx8) CMOS MASK ROM

KM23C4000D(E)TY 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre

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Samsung semiconductor

KM23C4000DG - 4M-Bit (512Kx8) CMOS MASK ROM

KM23C4000D(G) 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c

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Hynix Semiconductor

HY29F400TT90 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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Hynix Semiconductor

HY62CT08081E-DTE - 32Kx8bit CMOS SRAM

HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Marking

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Samsung

KM684000C - 512Kx8 bit Low Power CMOS Static RAM

KM684000C Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize

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ICSI

IC62LV5128L - 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

www.DataSheet4U.com IC62LV5128L IC62LV5128LL Document Title 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No

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Simtek

STK22C48 - 2Kx8 AutoStore nvSRAM

www.DataSheet4U.com STK22C48 2Kx8 AutoStore nvSRAM DESCRIPTION The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage

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Samsung semiconductor

KM23C4000DETY - 4M-Bit (512Kx8) CMOS MASK ROM

KM23C4000D(E)TY 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre

(13 views)

Samsung semiconductor

KM23C4000D - 4M-Bit (512Kx8) CMOS MASK ROM

KM23C4000D(G) 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c

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ETC

ES62UL256 - 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com ES62UXX256 Family ES62UL256 Family

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Hynix Semiconductor

HY29F400BT45 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

(12 views)

Hynix Semiconductor