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EDJ4208EFBG - 512M words x 8 bits 4G bits DDR3L SDRAM
COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b.A29DL324 - 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL324 Series 32M-Bit CMOS Low Voltage Dual Operation Flash Memory Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) Features.MC-4532CC727XFA - 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC727XFA 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC727XFA.MR27T1602F - 1M-Word x 16-Bit or 2M-Word x 8-Bit P2ROM
OKI Semiconductor MR27T1602F 1M–Word × 16–Bit or 2M–Word × 8–Bit FEDR27T1602F-02-02 Issue Date: Mar. 12, 2002 P2ROM PIN CONFIGURATION (TOP VIEW) FE.HM5259165B-A6 - 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
HM5259165B-75/A6 HM5259805B-75/A6 HM5259405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-.HM5259405B-A6 - 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
HM5259165B-75/A6 HM5259805B-75/A6 HM5259405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-.LC33832M - 256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp.LC33832ML-10 - 256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp.LC33832ML-70 - 256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp.LC33832ML-80 - 256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp.MR27T1602L - 1M-Word x 16-Bit or 2M-Word x 8-Bit P2ROM
OKI Semiconductor MR27T1602L P2ROM1M–Word × 16–Bit or 2M–Word × 8–Bit FEDR27T1602L-02-01 Issue Date: Dec. 8, 2004 FEATURES · 1,048,576-word × 16-bit.MR27T3202F - 2M-Word x 16-Bit or 4M-Word x 8-Bit P2ROM
OKI Semiconductor MR27T3202F P2ROM2M–Word × 16–Bit or 4M–Word × 8–Bit FEDR27T3202F-02-04 Issue Date: Jul. 9, 2004 FEATURES · 2,097,152-word × 16-bi.MC-4532CC727 - 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 5 Description The MC-4532CC727EF .MB82DP02183D - 32M Bit (2 M word X 16 bit) Mobile Phone Application Specific Memory
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11436-1E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application.MR26T51203L - 32M-Word x 16-Bit or64M-Word x 8-Bit P2ROM
www.DataSheet4U.com OKI Semiconductor MR26T51203L 32M–Word × 16–Bit or 64M–Word × 8–Bit PEDR26T51203L-02-04 Issue Date: Mar. 26, 2004 Preliminary P.MR26V51203L - 32M-Word x 16-Bit or 64M-Word x 8-Bit
www.DataSheet4U.com OKI Semiconductor MR26V51203L 32M–Word × 16–Bit or 64M–Word × 8–Bit PEDR26V51203L-02-06 Issue Date: Jul. 9, 2004 Preliminary PI.MR26V51253L - 32M-Word x 16-Bit or 64M-Word x 8-Bit
www.DataSheet4U.com OKI Semiconductor MR26V51253L 32M–Word × 16–Bit or 64M–Word × 8–Bit Page Mode FEDR26V51253L-02-02 Issue Date: APR. 8, 2005 P2RO.UPD4632312A-X - 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Descr.