2M-Word Datasheet | Specifications & PDF Download

Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp

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Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp

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A29DL323 Series 32M-Bit CMOS Low Voltage Dual Operation Flash Memory Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) Features

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OKI Semiconductor MR27V1652F P2ROM1M–Word × 16–Bit or 2M–Word × 8–Bit Page Mode FEDR27V1652F-02-02 Issue Date: Jul. 9, 2004 GENERAL DESCRIPTION The

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IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM P JANUARY 2008 FEATURES • Concurrent auto precharge • Clock rate:166/143 MHz •

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Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp

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OKI Semiconductor MR27T1602L P2ROM1M–Word × 16–Bit or 2M–Word × 8–Bit FEDR27T1602L-02-01 Issue Date: Dec. 8, 2004 FEATURES · 1,048,576-word × 16-bit

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OKI Semiconductor MR27T3202L P2ROM2M–Word x 16–Bit or 4M–Word x 8–Bit FEATURES ? 2,097,152-word 16-bit / 4,194,304-word 8-bit electrically switchable

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647XFA 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD647XFA

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11436-1E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Descr

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FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific

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FUJITSU MICROELECTRONICS DATA SHEET DS05-11463-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific

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A29DL324 Series 32M-Bit CMOS Low Voltage Dual Operation Flash Memory Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) Features

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HM5257165B-75/A6 HM5257805B-75/A6 HM5257405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-

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HM5257165B-75/A6 HM5257805B-75/A6 HM5257405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-

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HM5257165B-75/A6 HM5257805B-75/A6 HM5257405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-

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