2N-2P-CHANNEL Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CRTD032N03L2P General Description： CRTD032N03L2P , the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1. General description Dual N-channel enhancement mode Fiel

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XP2P052N Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive D ▼ Small Package Outline ▼ Surface Mount Device

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www.DataSheet4U.com PD - 90437D POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A IRF

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www.DataSheet4U.com PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY ® Product Summa

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2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhanceme

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2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhan

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S T M9930A S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y (N-C hanne

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AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Mo

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AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Mo

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T  echcode®       2N AND 2P-CHANNEL Enhancement Mode MOSFET DESCRIPTION  The  TDM3411  uses  advanced  trench  technology  to  provide  excel

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2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 40mΩ 45mΩ ID 5.5

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www.DataSheet4U.com PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE

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SSM9934GM 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY P2G N-CH BVDSS RDS(ON) N2G N1S/N2S N1D/P1D 35V 48mΩ 4.3A -35V 72mΩ -3.6A

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CYStech Electronics Corp. Spec. No. : C934Q8 Issued Date : 2013.10.01 Revised Date : 2013.10.03 Page No. : 1/12 2N- AND 2P-Channel Logic Level Enhan

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CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 1/12 2N- and 2P-Channel Enhancement Mode MOSFET MTC9

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Advanced Power Electronics Corp. AP9930AGM RoHS-compliant Product 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low O

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Advanced Power Electronics Corp. AP9932GM Pb Free Plating Product 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low O

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Advanced Power Electronics Corp. AP2P052N Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Small Package

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2N7002PW 60 V, 310 mA N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tra

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