EMB9930G Datasheet - Excelliance MOS

EMB9930G 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor

2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 40mΩ 45mΩ ID 5.5A ‐4.5A EMB9930G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM .

EMB9930G Datasheet (214.60 KB)