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EMB90N08A Datasheet - Excelliance MOS

EMB90N08A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.05mH Power Dissipatio.

EMB90N08A Datasheet (227.25 KB)

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Datasheet Details

Part number:

EMB90N08A

Manufacturer:

Excelliance MOS

File Size:

227.25 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB90N08A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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