EMB90A08G Datasheet - Excelliance MOS

EMB90A08G MOSFET

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V RDSON (MAX.) 85mΩ ID 4.5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=6A, RG=25Ω L = 0.05mH Power Dissipation TA.

EMB90A08G-ExcellianceMOS.pdf