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EMB90P06CS Datasheet - Excelliance MOS

EMB90P06CS P-Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 90mΩ ID ‐10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐10A, RG=25Ω L = 0.05mH Power Dissipa.

EMB90P06CS-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB90P06CS

Manufacturer:

Excelliance MOS

File Size:

191.12 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB90P06CS EMB90P06CS P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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