EMB99A0G

Part number:

EMB99A0G

Manufacturer:

Excelliance MOS

File Size:

213.95 KB

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📄 Download EMB99A0G Datasheet PDF

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Mosfet.
2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH .
BVDSS 100V ‐100V RDSON (MAX.) 250mΩ 300mΩ ID 2.2A ‐1.7A EMB99A0G Pb‐Free Lead Plating & Hal.

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EMB9930G, Excelliance MOS
2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 40mΩ 45mΩ ID 5.5.

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JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB9 Dual Digital Transistors (PNP+PNP) FEATURES z .

EMB90A08G Datasheet PDF

EMB90A08G, Excelliance MOS
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V RDSON (MAX.) 85mΩ ID 4.5A UIS, Rg 100% Tested P.

EMB90N08A Datasheet PDF

EMB90N08A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 10A G UIS, Rg 100% Tested .

EMB90N08G Datasheet PDF

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EMB90N08V Datasheet PDF

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 5.2A G UIS, Rg 100% Tested .

EMB90P06A Datasheet PDF

EMB90P06A, Excelliance MOS
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 90.8mΩ ID ‐10A G UIS, Rg 100% Test.

MOSFET

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