EMB99A0G Datasheet - Excelliance MOS

EMB99A0G MOSFET

2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 250mΩ 300mΩ ID 2.2A ‐1.7A EMB99A0G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID .

EMB99A0G Datasheet (213.95 KB)