2N7002PW 310mA N-channel MOSFET

nexperia

Description

2N7002PW 60 V, 310 mA N-channel Trench MOSFET 23 November 2020 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSF.

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Datasheet Specifications

Part number: 2N7002PW
Manufacturer: nexperia ↗
File Size: 277.85 KB
Datasheet: 2N7002PW-nexperia.pdf
Description: 310mA N-channel MOSFET

Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage ID drain current VGS = 10 V;

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2N7002PW 310mA N-channel MOSFET nexperia

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