2N40-V Datasheet | Specifications & PDF Download

ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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InterFET Product Folder Technical Support Order Now 2N4091-2-3 2N4091, 2N4092, 2N4093 N-Channel JFET Features • InterFET N0132S Geometry • Low N

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2N4000 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.

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2N404 GERMANIUM PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N404 is a germanium PNP transistor design

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2N404 (GERMANIUM) 2N404A PNP GERMANIUM SWITCHING TRANSISTORS .. designed for medium-speed saturated switching applications. • Low Collector-Emitter S

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Fiie No. 64 OOClBLJlJ Solid State Division Power Transistors 2N4063 2N3439 2N4064

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, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 FEATURES • High Gain At Low Cu

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2N4072 (SILICON) 2N4073 NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_ CASE 22 (TO-18)

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2N4066 (SILICON) 2N4067 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power. c

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2N4001 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.

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TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 Devices 2N4029 2N4033 Qualified Level JAN JANTX JANTXV MAXIMUM RATING

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www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Faci

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2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary int

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2N4030 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

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NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro

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MAXIMUM RATINGS Rating 2N4026/28 2N4027/29 Symbol 2N4030/32 2N4031/33 Unit Collector-Emitter Voltage) 1) VCEO 60 80 Vdc Collector-Base Voltage

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2N4033CSM4 HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ±

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2N4036 MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly

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