2N6660 Datasheet | Specifications & PDF Download

2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for h

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www.DataSheet.co.kr 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V)

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low

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www.DataSheet.co.kr 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V)

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2N6660X MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATUR

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www.DataSheet.co.kr 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V)

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N-Channel Enhancement Mode Power MOSFET 2N6660 Hermetic Metal TO39 (TO-205AD) Package VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω Fast Switching, Low CISS

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2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling •

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Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of

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2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) 60 3 at VGS = 10 V

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2N6660, 2N6661 N Channel Power MOSFET Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/547 • Features Low On-Resistance, Fast Swi

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www.DataSheet.co.kr 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V)

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