2N7002B Datasheet | Specifications & PDF Download

Description AP2N7002BI 60V N-Channel Enhancement Mode MOSFET The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate c

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2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 2000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

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MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications • High-Speed Switching 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.

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2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancem

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2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-c

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2N7002BKMB 83B 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel en

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2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhanceme

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2N7002BK 60 V, 350 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tran

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2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

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2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

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2N7002BKW 60 V, 310 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tra

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