2N7002KDW Datasheet | Specifications & PDF Download

Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V

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Elektronische Bauelemente 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET FEATURES  Low on-resistance  Fast switching Speed  Low-voltage

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2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced T

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Enhancement Mode MOSFET (Double N-Channel) 2N7002KDWS Enhancement Mode MOSFET (Double N-Channel) Features  Advanced Trench Process Technology  High

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Elektronische Bauelemente S2 7002KDW 115mA, 60V Dual -Channel MOSFET FEATURES Low On-Resistance Fast Switching Speed Low-Voltage Drive Easily Design

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2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) ＜2.5o

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L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product complia

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2N7002KDW-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advance

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L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product complia

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