2SA1213-G Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low

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2SA1213-O/2SA1213-Y Features • High Speed Switching Time • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead F

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low

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2SA1213-O/2SA1213-Y Features • High Speed Switching Time • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead F

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SMD Type Transistors Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Ti

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR (PNP) FEATURES z Complementary to 2SC

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SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR (PNP) FEATURES z Small Flat Package z Power Amplifier and Switching Applications z Low Sat

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2SA1213 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features ,，， 2SC2873 。 L

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General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features -Small flat package. -Power amplifier and switching -applications. -Low satura

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Silicon Planar Epitaxial Transistor FEATURES z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.

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