isc Silicon PNP Power Transistor DESCRIPTION ·Hi.
LGE
2SA1700 - PNP Transistor
1.BASE 2.COLLECTOR 3.EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features High breakdown voltage Adoption of MBIT process Excellen.
GME
2SA1700 - PNP Epitaxial Planar Silicon Transistor
PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Prod.
INCHANGE
2SA1700 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=.
BLUE ROCKET ELECTRONICS
2SA1700 - Silicon PNP transistor
2SA1700 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features ，， MBIT 。 High br.
UTC
2SA1700 - PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Exc.
