Medium power transistor(-80V,-0.7A) FEATURES .
GME
2SB1189 - Medium power transistor
Medium power transistor(-80V,-0.7A) FEATURES High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A. Complementary the 2SD1767. Pb Lead-fr.
BLUE ROCKET ELECTRONICS
2SB1189 - Silicon PNP transistor
2SB1189 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features , 2SD1767 。 Low.
JCET
2SB1189 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) SOT-89-3L FEATURES z High bre.
Rohm
2SB889F - (2SB889F / 2SB1189 / 2SB1238) Medium Power Transistor
Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278 .
HOTTECH
2SB1189 - PNP Transistor
Plastic-Encapsulate Transistors FEATURES • High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratings (Ta=25 Parameter Collector-.
ROHM
2SB1189 - Medium power transistor
Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements th.
Kexin
2SB1189 - Medium Power Transistor
SMD Type Medium Power Transistor 2SB1189 Transistors Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Rati.
Jin Yu Semiconductor
2SB1189 - TRANSISTOR
2SB1 1 8 9 TRANSISTOR(PNP) FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VC.