Production specification Silicon Epitaxial Planar.
L2SC2411KQLT1G - Medium Power Transistor NPN silicon
LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre.2SC2411K - Medium Power Transistor
2SC2411K Medium Power Transistor (32V, 500mA) Parameter VCEO IC Value 32V 500mA lFeatures 1) High ICMAX ICMAX=0.5A 2)Low VCE(sat) Optimal for l.2SC2411 - NPN Transistor
2SC2411 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors A suffix of -C specifies halogen & lead-free SOT-23 FEATURES 1 .2SC2411K - NPN Transistor
2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collect.2SC2411KPT - Medium Power NPN Transistor
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts APPLICATION * Medium Power Amplifier . 2SC2411KPT CURRENT 0.5 .2SC2411KRLT1 - Medium Power Transistor
FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V WILLAS SOD-123+ PACKAGE Pb F.2SC2411K - Silicon NPN transistor
2SC2411K Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,, 2SA1036K 。 .2SC2411 - Silicon Transistor
Production specification Silicon Epitaxial Planar Transistor FEATURES Power dissipation: PCM=200Mw. High ICM(MAX.),I CM(MAX.)=0.5mA. Low VCE(s.2SC2411 - NPN Transistors
SMD Type Transistors NPN Transistors 2SC2411 (2SC2411K) ■ Features ● Collector Current Capability IC=0.5A ● Low VCE(sat).Optimal for low voltage ope.2SC2411-P - NPN Silicon Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .2SC2411-Q - NPN Silicon Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .2SC2411-R - NPN Silicon Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .2SC2411KQLT1 - Medium Power Transistor
FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V WILLAS SOD-123+ PACKAGE Pb F.L2SC2411KPLT1 - Medium Power Transistor NPN silicon
LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre.L2SC2411KRLT1 - Medium Power Transistor NPN silicon
LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre.L2SC2411KQLT3G - Medium Power Transistor
LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K ƽWe declare that the materi.2SC2411 - GENERAL PURPOSE TRANSISTOR
REPLACEMENT TYPE : 2SC2411 FEATURES High ICMax.ICMax.=0.5mA Low VCE(sat).Optimal For Low Voltage Operation Complements The HAA1036 MAXIMUM RATI.2SC2411K - Medium Power Transistor
SMD Type Medium Power Transistor 2SC2411K SOT-23 Transistors Unit: mm High ICMax. ICMax. = 0.5A +0.1 2.4-0.1 Low VCE(sat). Optimal for low voltage.2SC2411K - NPN Transistor
2SC2411K NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Vol.2SC2411KxLT1 - Medium Power Transistor
FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V WILLAS SOD-123+ PACKAGE Pb F.