2SC5305 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage :V(BR)CBO= 1200V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for

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UNISONIC TECHNOLOGIES CO., LTD 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR  FEATURES * High Hfe F

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Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features · High breakdown voltage (V

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UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement

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