2SD Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2394 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20F package ·Low collecto

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www.DataSheet4U.com 2SD1650 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic env

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Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Complem

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2253 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·Buil

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2SD1135 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 Outline TO-220AB 1 23 1. Base 2. Colle

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2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs Unit: mm z High Voltage : VCBO

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 · www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Coll

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www.DataSheet4U.com UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *M

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UNISONIC TECHNOLOGIES CO., LTD 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION 1  FEATURES * Recommended for 45~50W Audi

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DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Compleme

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD798 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High volt

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5074 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig

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UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD762 2SD762A DESCRIPTION www.dat·aWshiethet4TuO.co-2m20C package ·Wide

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isc Silicon NPN Power Transistor 2SD313 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Vol

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